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ۼ : 13-09-11 17:31
[13.09]ö -Copper-Vapor-Assisted Chemical Vapor Deposition for High-Quality and Metal-Free Single-Layer Graphene
 ۾ :
ȸ : 1,261  

Copper-Vapor-Assisted Chemical Vapor Deposition for High-Quality and Metal-Free Single-Layer Graphene
- Hyungki Kim,Intek Song,Chibeom Park, Minhyeok Son, Misun Hong, Youngwook Kim, Jun Sung Kim, Hyun-Joon Shin, Jaeyoon Baik, and Hee Cheul Choi*

We report that high-quality single-layer graphene (SLG) has been successfully synthesized directly on various dielectric substrates including amorphous SiO2/Si by a Cu-vapor assisted chemical vapor deposition (CVD) process. The Cu vapors produced by the sublimation of Cu foil that is suspended above target substrates without physical contact catalyze the pyrolysis of methane gas and assist nucleation of graphene on the substrates. The overall quality of graphene grown by Cu-vapor-assisted CVD is comparable to that of the graphene grown by regular metal-catalyzed CVD on a Cu foil. While Cu vapor induces the nucleation and growth of SLG on an amorphous substrate, the resulting SLG is confirmed to be Cu-free by synchrotron X-ray photoelectron spectroscopy. The SLG grown by Cu-vapor-assisted CVD is fabricated into field effect transistor devices without transfer steps that are generally required when SLG is grown by regular CVD process on metal catalyst substrates.

Ϲ Cu Ni ̱ݼ ˸Ÿ ٸ ݼ ׷ ǰ ſ , ̰ ݼ ǿ ˸ȿ ˷ ִ. ̹ ̷ غϱ ؼ Cu ݼ ˸Ÿ · ν ȭǸ ſ ǰ ׷ ۵ Ͽ. ̷ ׷ ڼ ÿ ׷ ü Ʈ ϴ 䱸 ʱ Ʈ ߻ϴ ripple, crack ݼ˸ ܿ ܿ ߻ϴ ġ ʴ Ư ȭ ִ ִ.


 
 

Total 73
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